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| Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SC1213 2SC1213A FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (NPN) TO-92 1. EMITTER 2. COLLECTOR 0.4 W (Tamb=25) 3. BASE 0.5 A 123 2SC1213 : 35 V 2SC1213A : 50 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS(Tamb=25 Parameter Collector-base breakdown voltage 2SC1213 2SC1213A Collector-emitter breakdown voltage 2SC1213 2SC1213A Emitter-base breakdown voltage Collector cut-off current unless otherwise specified) Test conditions MIN 35 50 35 50 4 0.5 60 10 0.2 0.6 0.75 V V 320 TYP MAX UNIT V Symbol V(BR)CBO Ic= 10A , IE=0 V(BR)CEO V(BR)EBO ICBO hFE(1) IC= 1 mA , IB=0 IE=10A, IC=0 VCB= 20V , IE=0 VCE=3V, IC= 10mA VCE=3V, IC= 500mA IC= 150mA, IB= 15 mA VCE= 3V, IC= 10 mA V V A DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE CLASSIFICATION OF hFE(1) Rank Range B 60-120 C 100-200 D 160-320 |
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